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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFA 16N50P IXFP 16N50P IXFH 16N50P
VDSS ID25
RDS(on) trr
= 500 V = 16 A = 400 mΩ = 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 500 500 ±30 ± 40 16 35 16 25 750 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C
TO-220 (IXTP)
G
D S
(TAB)
TO-263 (IXTA)
G
S (TAB)
TO-247 (IXFH)
1.6 mm (0.062 in.
IXFH16N50P Datasheet
