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Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = 102A ≤ 18mΩ ≤ 120ns
TO-263 (IXFA)
G
S (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC
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Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 102 75 300 51 750 20 455 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ V/ns W °C °C °C °C °C Nmlb.in. N/lb. g g g
TO-220 (IXFP)
G
D S
(TAB)
TO-247 (IXFH)
G
D
(TAB) S D = Drain TAB = Drain
G = Gate S = Source
1.6mm (0.062 in.
IXFH102N15T Datasheet
