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IXFH110N25T - TrenchHV Power MOSFET HiPerFET

Datasheet Summary

Features

  • z z International standard package Avalanche rated 1.6mm (0.062 in. ) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 Advantages z z z Easy to mount Space savings High power density.

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Datasheet Details

Part number IXFH110N25T
Manufacturer IXYS Corporation
File Size 156.94 KB
Description TrenchHV Power MOSFET HiPerFET
Datasheet download datasheet IXFH110N25T Datasheet
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TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g TO-247 (IXFH) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z International standard package Avalanche rated 1.6mm (0.062 in.
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