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Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFH160N15T
VDSS ID25
RDS(on)
= 150V = 160A ≤ 9.6mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum 150 150 ± 30 160 75 430 5 1 10 830 -55 ... +175 175 -55 ... +175
Ratings V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque
300 260 1.
IXFH160N15T Datasheet
