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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFH16N90 IXFX16N90
VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W
trr £ 200 ns
Maximum Ratings 900 900 ± 20 ± 30 16 64 16 45 5 360 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A mJ V/ns W °C °C °C °C Nm/lb.in.
IXFH16N90 Datasheet
