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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS
VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A mJ J V/ns
G S G D
S
TO-268 (IXFT)
D (TAB)
PLUS220 (IXFV)
PD TJ TJM Tstg TL TSOLD Md FC Weight
460 -55 ... +150 150 -55 ... +150
W °C °C °C °C °C
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.
IXFH16N80P Datasheet
