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IXZ4DF18N50 - RF Power MOSFET&DRIVER

Description

The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications.

Features

  • Isolated substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power cycling capability.
  • IXYS advanced Z-MOS process.
  • Low Rds(ON).
  • Very low insertion inductance(.

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