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IXZH10N50LB - RF Power MOSFET

Download the IXZH10N50LB datasheet PDF. This datasheet also covers the IXZH10N50LA variant, as both devices belong to the same rf power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • nA.
  • IXYS RF Low Capacitance Z-MOSTM Process µA.
  • Very low insertion inductance (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXZH10N50LA-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXZH10N50LA RF Power MOSFET
IXZR16N60 Z-MOS RF Power MOSFET
IXZR16N60A Z-MOS RF Power MOSFET
IXZR16N60B Z-MOS RF Power MOSFET

Full PDF Text Transcription

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IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode VDSS ID25 = 500 V = 10 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 500 V 500 V ±20 V ±30 V 10 A 60 A 16 A TBD mJ 5 V/ns >200 V/ns B D =G A= S SG D 150V (operating) PDC PDHS PDAMB RthJC RthJHS (1) Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 250 W 180 W 3W 0.60 C/W 0.
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