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IXZR16N60 - Z-MOS RF Power MOSFET

Features

  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power cycling capability.
  • IXYS advanced Z-MOS process.
  • Low gate charge and capacitances.
  • easier to drive.
  • faster switching.
  • Low RDS(on).
  • Very low insertion inductance (.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXZR16N60A Z-MOS RF Power MOSFET
IXZR16N60B Z-MOS RF Power MOSFET
IXZH10N50LA RF Power MOSFET
IXZH10N50LB RF Power MOSFET

Full PDF Text Transcription

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600 V RDS(on) ≤ 0.56 Ω PDC = 350 VGS VGSM Continuous Transient ±20 V ±30 V 60 S DD GS = =G 60A60B = ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 18 A 90 A D IAR EAR Tc = 25°C Tc = 25°C 18 A TBD mJ G S dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 5 >200 V/ns V/ns PDC PDHS PDAMB RthJC RthJHS Tc = 25°C, Derate 4.
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