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IXZ2210N50L - N-Channel Linear 175MHz RF MOSFET

Download the IXZ2210N50L datasheet PDF. This datasheet also covers the IXZ210N50L variant, as both devices belong to the same n-channel linear 175mhz rf mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 150V (operating) 300 & 550 Watts 175MHz PDC PDHS PDAMB RthJC RthJHS www. DataSheet4U. com Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 470 235 10 0.32 0.57 min. typ. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.95 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V nA µA mA Ω S °C °C °C °C g.
  • Isolated Substrate.
  • high isolation voltage (>2500V).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXZ210N50L_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXZ210N50L N-Channel Linear 175MHz RF MOSFET
IXZ12210N50L RF Power MOSFET
IXZ308N120 Z-MOS RF Power MOSFET
IXZ316N60 600V (max) Switch-Mode MOSFETS
IXZ318N50 500V (max) Switch-Mode MOSFETS

Full PDF Text Transcription

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IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ210N50L single ended device unless otherwise noted. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 >200 IXZ210N50L IXZ2210N50L V V V V A A A mJ V/ns V/ns 940 470 10 0.16 0.29 W W W C/W C/W max.
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