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IXZH10N50LA/B
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode
VDSS ID25
= 500 V = 10 A
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Maximum Ratings 500 V 500 V ±20 V ±30 V 10 A 60 A 16 A TBD mJ 5 V/ns
>200 V/ns
B
D
=G A=
S
SG
D
150V (operating)
PDC PDHS PDAMB RthJC RthJHS
(1) Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C
250 W 180 W
3W 0.60 C/W 0.
IXZH10N50LA Datasheet
