Datasheet4U Logo Datasheet4U.com

IXZ12210N50L - RF Power MOSFET

Features

  • 0.83 1.00 min. 0.42 0.50 typ.
  • IXYS RF Low Capacitance Z-MOSTM Process VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.83 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V nA µA mA Ω S °C °C °C °C g.
  • Very low insertion inductance (.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXZ-2020 2 Axis MEMS gyroscope InvenSense
IXZH10N50LA RF Power MOSFET IXYS
IXZH10N50LB RF Power MOSFET IXYS
IXZR16N60 Z-MOS RF Power MOSFET IXYS
IXZR16N60A Z-MOS RF Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXZ210N50L N-Channel Linear 175MHz RF MOSFET
IXZ2210N50L N-Channel Linear 175MHz RF MOSFET
IXZ308N120 Z-MOS RF Power MOSFET
IXZ316N60 600V (max) Switch-Mode MOSFETS
IXZ318N50 500V (max) Switch-Mode MOSFETS

Full PDF Text Transcription

Click to expand full text
IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 ±20 ±30 10 60 16 TBD 5 V V V V A A A mJ V/ns 125V (operating) 175MHz >200 Per Device Total V/ns PDC PDHS PDAMB RthJC RthJHS www.DataSheet4U.com Tc = 25°C, Derate 6.
Published: |