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IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET
Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-Up Protected • Low Quiescent Supply Current Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area 1000 Volts 12 A 0.
IXZ4DF12N100 Datasheet
