Datasheet4U Logo Datasheet4U.com

STB55NF06 - N-Channel MOSFET

Datasheet Summary

Features

  • With To-263(D2PAK) package.
  • Excellent switching performance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – STB55NF06

Datasheet Details

Part number STB55NF06
Manufacturer INCHANGE
File Size 199.64 KB
Description N-Channel MOSFET
Datasheet download datasheet STB55NF06 Datasheet
Additional preview pages of the STB55NF06 datasheet.

📁 Similar Datasheet

  • STB55NF06 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NF06L - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NF06L-1 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NF03L - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NF03L-1 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NE06 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB55NE06L - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STB50N25M5 - N-Channel Power MOSFET (STMicroelectronics)
  • STB50NE08 - N-Channel Power MOSFET (ST Microelectronics)
  • STB50NE10 - N-Channel Power MOSFET (ST Microelectronics)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current,high switch speed ·Motor control,audio amplifiers ·DC-DC&DC-AC converters ·Automotive INCHANGE Semiconductor STB55NF06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±20 50 35 200 PD Total Dissipation @TC=25℃ 110 Tch Max.
Published: |