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STB50NE10 - N-Channel Power MOSFET

Datasheet Summary

Description

strip-based process.

Features

  • Type VDSS RDS(on) ID STB50NE10 100V.

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Datasheet Details

Part number STB50NE10
Manufacturer STMicroelectronics
File Size 438.39 KB
Description N-Channel Power MOSFET
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Full PDF Text Transcription

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STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V <0.027Ω 50A t(s) ■ Exceptional dv/dt capability ■ 100% avalanche tested uc ■ Low gate charge at 100 °C rod ■ Application oriented characterization te P ct(s) Description le du This Power MOSFET is the latest development of so ro STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor b P shows extremely high packing density for low on- O te resistance, rugged avalanche characteristics and ) le less critical alignment steps therefore a t(s o remarkable manufacturing reproducibility.
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