STB50NE10L
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
PRELIMINARY DATA
3 1
D2PAK TO-263 (suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR VGS ID ID
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C
IDM(- ) Ptot
Drain Current (pulsed) Total Dissipation at Tc = 25 o C
Derating Factor dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction...
