Click to expand full text
®
STB50NE10L
N - CHANNEL 100V - 0.020Ω - 50A - D2PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB50NE10L
100 V <0.025 Ω
50 A
s TYPICAL RDS(on) = 0.020 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED
CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.