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STB50NE08
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
T Y PE
V DSS
RDS(on)
ID
ST B50NE08
80 V <0.024 Ω
50 A
s TYPICAL RDS(on) = 0.020 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED
CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB50NE08 Datasheet
