STB50NE08
FEATURE
SIZE™ ” POWER MOSFET
T Y PE
V DSS
RDS(on)
ST B50NE08
80 V <0.024 Ω
50 A s TYPICAL RDS(on) = 0.020 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 o C s APPLICATION ORIENTED
CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature
Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1
D2PAK TO-263 (suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VDGR VGS
ID ID
Drain-source Voltage (VGS = 0)
Drain- gate...
