STB55NE06L
FEATURE
SIZE™ " POWER MOSFET
PRELIMINARY DATA TYPE STB55NE06L s s s s s
V DSS 60 V
R DS(on) < 0.022 Ω
ID 55A s
TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 o C APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature
Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a . remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) s
D2PAK TO-263 (suffix "T4")
Data Shee
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (
- ) P tot dv/dt T stg Tj...
