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STB55NE06L
N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE™ " POWER MOSFET
PRELIMINARY DATA TYPE STB55NE06L
s s s s s
V DSS 60 V
R DS(on) < 0.022 Ω
ID 55A
s
TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a DataSheet4U.com remarkable manufacturing reproducibility.
STB55NE06L Datasheet
