Click to expand full text
www.DataSheet4U.com
STB55NE06
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST B55NE06
s s s s s s
V DSS 60 V
R DS(on) < 0.022 Ω
ID 55 A
s
TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and DataSheet4U.com less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB55NE06 Datasheet
