STB55NE06
FEATURE
SIZE™ ” POWER MOSFET
TYPE ST B55NE06 s s s s s s
V DSS 60 V
R DS(on) < 0.022 Ω
ID 55 A s
TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 o C HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for low on INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and . less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
D2PAK TO-263 (suffix ”T4”)
Data Shee
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (
- ) P t ot dv/dt T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current...
