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STB100N6F7-2 - N-Channel MOSFET

Datasheet Summary

Features

  • With To-263(D2PAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number STB100N6F7-2
Manufacturer INCHANGE
File Size 245.86 KB
Description N-Channel MOSFET
Datasheet download datasheet STB100N6F7-2 Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 125 W Tch Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rthj-case Thermal resistance junction-case MAX 1.2 UNIT ℃/W STB100N6F7-2 isc website：www.iscsemi.
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