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BTN853L3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A.
  • 5.2A continuous collector current (10.4A peak).
  • Very low saturation voltages.
  • Excellent gain characteristics.
  • Pb-free lead plating and halogen-free package Symbol BTN853L3 B：Base C：Collector E：Emitter Outline SOT-223 C E C B Ordering Information Device BTN853L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment frie.

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Datasheet Details

Part number BTN853L3
Manufacturer CYStech
File Size 294.62 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN853L3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C821L3 Issued Date : 2010.02.05 Revised Date : 2017.08.21 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTN853L3 BVCEO ID RCESAT(max) 60V 5.2A 55mΩ Features • Extremely low equivalent on resistance; RCE(SAT)≤ 60mΩ at 5.2A • 5.2A continuous collector current (10.
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