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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN8050A3
Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2013.05.21 Page No. : 1/5
Description
The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• High collector current , IC = 1.5A • Low VCE(sat) • Complementary to BTP8550A3. • Pb-free lead plating and halogen-free package
Symbol
BTN8050A3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC IB Pd Tj Tstg
BTN8050A3
ECB
Limits
40 25 6 1.5 0.