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BTN8050BA3 - General Purpose NPN Epitaxial Planar Transistor

Description

The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation.

Features

  • High collector current , IC = 1.5A.
  • Low VCE(sat).
  • Complementary to BTP8550BA3.
  • Pb-free lead plating and halogen-free package Symbol BTN8050BA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg BTN8050BA3 EBC Limits 40 25 6 1.5 0.625.

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Datasheet Details

Part number BTN8050BA3
Manufacturer Cystech Electonics
File Size 264.84 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN8050BA3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2012.10.03 Page No. : 1/8 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , IC = 1.5A • Low VCE(sat) • Complementary to BTP8550BA3. • Pb-free lead plating and halogen-free package Symbol BTN8050BA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg BTN8050BA3 EBC Limits 40 25 6 1.5 0.
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