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BTN8050N3 - General Purpose NPN Epitaxial Planar Transistor

Description

The BTN8050N3 is designed for general purpose low frequency amplifier applications.

Features

  • High collector current , IC = 0.8A.
  • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA.
  • Complementary to BTP8550N3. Symbol BTN8050N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : Single pulse, Pw=10ms Symbol VCBO VCEO VEBO.

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Datasheet Details

Part number BTN8050N3
Manufacturer Cystech Electonics
File Size 186.87 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN8050N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050N3 Description The BTN8050N3 is designed for general purpose low frequency amplifier applications. Features • High collector current , IC = 0.8A • Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA • Complementary to BTP8550N3.
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