Datasheet4U Logo Datasheet4U.com

BTN13003T3 - General Purpose NPN Epitaxial Planar Transistor

Features

  • High breakdown voltage, VCEO=450V (min. ).
  • High collector current, IC(max)=1.5A (DC).
  • Pb-free lead plating package Symbol BTN13003T3 Outline TO-126 B：Base C：Collector E：Emitter BCE Ordering Information Device BTN13003T3-0-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15.

📥 Download Datasheet

Datasheet Details

Part number BTN13003T3
Manufacturer CYStech
File Size 399.82 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN13003T3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTN1053L3 NPN Epitaxial Planar Transistor Cystech Electonics
BTN1053M3 NPN Epitaxial Planar Transistor Cystech Electonics
BTN2129A3 NPN Epitaxial Planar Transistor Cystech Electonics
BTN2129E3 NPN Epitaxial Planar Transistor Cystech Electonics
BTN2129T3 NPN Epitaxial Planar Transistor Cystech Electonics

Other Datasheets by CYStech

Part Number Description
BTN1053A3 Low Vcesat NPN Epitaxial Planar Transistor
BTN1053I3 NPN Epitaxial Planar Transistor
BTN1053K3 NPN Epitaxial Planar Transistor
BTN1101E3 Low Vcesat NPN Epitaxial Planar Transistor
BTN2369S3 High Frequency NPN Switching Transistor

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTN13003T3 Spec. No. : C827T3 Issued Date : 2012.04.09 Revised Date : 2019.08.28 Page No. : 1/7 Features  High breakdown voltage, VCEO=450V (min.)  High collector current, IC(max)=1.
Published: |