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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN1053A3
Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 1/7
Features
• Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA • 5A peak pulse current • Pb-free lead plating and halogen-free package
Symbol
BTN1053A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
BTN1053A3 Datasheet
