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BTN1101E3 - Low Vcesat NPN Epitaxial Planar Transistor

Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • RoHS compliant package Symbol BTN1101E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Juncti.

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Datasheet Details

Part number BTN1101E3
Manufacturer CYStech
File Size 134.94 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN1101E3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN1101E3 Spec. No. : C606E3-A Issued Date : 2005.01.03 Revised Date :2008.01.30 Page No. : 1/4 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol BTN1101E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
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