Datasheet Details
| Part number | AONS66940 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.31 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AONS66940 Datasheet
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| Part number | AONS66940 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.31 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AONS66940 Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Spike Optimized Process • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 48A < 8.2mΩ < 10.7mΩ DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66940 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 48 37 125 17.5 14 38 72 120 56.5 22.5 5.0 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 25 55 2.2 Units °C/W °C/W °C/W Rev.2.0: April 2019 www.aosmd.com Downloaded From Oneyac.com Page 1 of 6 AONS66940 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance
AONS66940 100V N-Channel AlphaSGT TM General.
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|---|---|
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| AONS66917T | 100V N-Channel AlphaSGT |
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