Datasheet Details
| Part number | AONS66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.87 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AONS66919 Datasheet
|
|
|
| Part number | AONS66919 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.87 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AONS66919 Datasheet
|
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Qg x RDS(ON) Product (FOM) • Pb-Free lead Plating, RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 85A < 5.9mΩ < 7.9mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66919 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 85 62 169 23 19 48 115 113 45 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.9 Max 20 50 1.1 Units °C/W °C/W °C/W Rev.1.2: January 2024 www.aosmd.com Page 1 of 6 AONS66919 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum
AONS66919 100V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AONS66916 | 100V N-Channel MOSFET |
| AONS66916T | 100V N-Channel AlphaSGT |
| AONS66917 | N-Channel MOSFET |
| AONS66917T | 100V N-Channel AlphaSGT |
| AONS66908 | 100V N-Channel MOSFET |
| AONS66909 | 100V N-Channel MOSFET |
| AONS66923 | N-Channel MOSFET |
| AONS66940 | 100V N-Channel MOSFET |
| AONS660A70F | N-Channel Power Transistor |
| AONS66402 | N-Channel MOSFET |