Datasheet Details
| Part number | AONS66917T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.05 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet |
 AONS66917T Datasheet
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| Part number | AONS66917T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.05 KB |
| Description | 100V N-Channel AlphaSGT |
| Datasheet |
AONS66917T Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 185A < 3.5mΩ < 5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AONS66917T Package Type DFN 5x6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 185 130 740 32 26 65 211 258 129 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.43 Max 20 50 0.58 Units °C/W °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AONS66917T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Vo
AONS66917T 100V N-Channel AlphaSGT TM General.
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|---|---|
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| AONS66916 | 100V N-Channel MOSFET |
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