Datasheet Details
| Part number | AONS66402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 379.35 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AONS66402 Datasheet
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| Part number | AONS66402 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 379.35 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AONS66402 Datasheet
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• Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 210A < 1.6mΩ < 2.3mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66402 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 210 135 360 49 39 52 406 119 47.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.87 Max 20 50 1.05 Units °C/W °C/W °C/W Rev.3.0: June 2022 www.aosmd.com Page 1 of 6 AONS66402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C
AONS66402 40V N-Channel AlphaSGT TM General.
| Part Number | Description |
|---|---|
| AONS66405T | 40V N-Channel MOSFET |
| AONS66406 | 40V N-Channel MOSFET |
| AONS66407 | 40V N-Channel MOSFET |
| AONS66408 | 40V N-Channel MOSFET |
| AONS66415 | 40V N-Channel MOSFET |
| AONS660A70F | N-Channel Power Transistor |
| AONS66520 | 150V N-Channel MOSFET |
| AONS66521 | 150V N-Channel MOSFET |
| AONS66524 | 150V N-Channel MOSFET |
| AONS66607 | 60V N-Channel MOSFET |