Datasheet Details
| Part number | AONS660A70F |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 475.54 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AONS660A70F Datasheet
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| Part number | AONS660A70F |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 475.54 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AONS660A70F Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 34A < 0.66Ω 14.5nC 1.9mJ Top View DFN5x6F Bottom View PIN1 PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D D G S Orderable Part Number AONS660A70F Package Type DFN5X6F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IDSM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Form Tape&Reel Minimum Order Quantity 3000 Maximum 700 ±20 ±30 9.6 6.0 34 1.7 1.3 2.1 2.2 19 100 20 138 1.1 4.1 2.6 -55 to 150 Units V V V A A A mJ mJ V/ns W W/°C W °C Typ Max Units 25 30 °C/W 45 55 °C/W 0.6 0.9 °C/W Rev 1.1: February 2020 www.aosmd.com Page 1 of 6 AONS660A70F Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=700V, VGS=0V V
AONS660A70F 700V, a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AONS66402 | N-Channel MOSFET |
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| AONS66406 | 40V N-Channel MOSFET |
| AONS66407 | 40V N-Channel MOSFET |
| AONS66408 | 40V N-Channel MOSFET |
| AONS66415 | 40V N-Channel MOSFET |
| AONS66520 | 150V N-Channel MOSFET |
| AONS66521 | 150V N-Channel MOSFET |
| AONS66524 | 150V N-Channel MOSFET |
| AONS66607 | 60V N-Channel MOSFET |