Datasheet Details
| Part number | AONS66923 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.14 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AONS66923 Datasheet
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| Part number | AONS66923 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.14 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AONS66923 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Spike Optimized Process • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 47A < 10.8mΩ < 14.8mΩ Top View DFN5X6 Bottom View Top View D PIN1 Orderable Part Number AONS66923 S S S G PIN1 1 2 3 4 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 47 30 105 15 12 30 45 48 19 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 20 45 2.1 Max 25 55 2.6 Units °C/W °C/W °C/W Rev.1.0: April 2018 www.aosmd.com Page 1 of 6 AONS66923 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C D
AONS66923 100V N-Channel AlphaSGT TM General.
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