Datasheet Details
| Part number | AONS66908 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 416.23 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AONS66908 Datasheet
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| Part number | AONS66908 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 416.23 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AONS66908 Datasheet
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• Trench Power AlphaSGTTM technology 100V • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 158A < 4.2mΩ < 5.4mΩ Applications • High Frequency Switching and Synchronous Rectification.
100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66908 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 158 100 335 30 24 64 205 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.45 Max 17 55 0.6 Units °C/W °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AONS66908 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current
AONS66908 100V N-Channel AlphaSGT TM General.
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|---|---|
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