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E4D20120G 20A Silicon Carbide Schottky Diode

E4D20120G Description

E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode .

E4D20120G Features

* 4th generation SiC merged PIN Schottky technology
* Zero reverse recovery current
* High-frequency operation
* Temperature-independent switching behavior
* AEC-Q101 qualified and PPAP capable
* Humidity resistant TO-263-2 Package Types: TO-263-2 PN

E4D20120G Applications

* Boost diodes in PFC or DC/DC stages
* Free wheeling diodes in inverter stages
* AC/DC converters
* Automotive and traction power conversion
* PV inverters Benefits
* Replace bipolar with unipolar rectifiers
* Essentially no switching losses

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Datasheet Details

Part number
E4D20120G
Manufacturer
Wolfspeed
File Size
726.84 KB
Datasheet
E4D20120G-Wolfspeed.pdf
Description
20A Silicon Carbide Schottky Diode

📁 Related Datasheet

  • E4D20120A - Silicon Carbide Schottky Diode (CREE)
  • E4D10120A - Silicon Carbide Schottky Diode (CREE)

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20A Silicon Carbide Schottky Diode Wolfspeed
Wolfspeed E4D20120G-like datasheet