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E4D20120G
1200 V, 20 A Silicon Carbide Schottky Diode
Features
• 4th generation SiC merged PIN Schottky technology • Zero reverse recovery current • High-frequency operation • Temperature-independent switching behavior • AEC-Q101 qualified and PPAP capable • Humidity resistant
TO-263-2
Package Types: TO-263-2 PN: E4D20120G
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
E4D20120G Datasheet
