• Part: E4D10120A
  • Description: Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: Cree
  • Size: 596.68 KB
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Cree
E4D10120A
Features Package - 4th Generation Si C Merged PIN Schottky Technology - Zero Reverse Recovery Current - High-Frequency Operation - Temperature-Independent Switching Behavior - AEC-Q101 Qualified and PPAP Capable - Humidity Resistant Benefits TO-220-2 - Replace Bipolar with Unipolar Rectifiers - Essentially No Switching Losses - Higher Efficiency - Reduction of Heat Sink Requirements - Parallel Devices Without Thermal Runaway - Ideal for Outdoor Environments Applications PIN 1 PIN 2 - Boost diodes in PFC or DC/DC stages - Free Wheeling Diodes in Inverter stages - AC/DC converters - Automotive and Traction Power Conversion - PV Inverters Part Number E4D10120A VDS 900 V ID @ 25˚C 11.5 A RDS(on) 280 mΩ CASE Package TO-220-2 Marking E4D10120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VRRM Repetitive Peak Reverse Voltage VR DC Peak Reverse Voltage IF Continuous Forward Current Ptot Power Dissipation IFRM d...