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E4D20120D Datasheet Silicon Carbide Power MOSFET

Manufacturer: Wolfspeed

Datasheet Details

Part number E4D20120D
Manufacturer Wolfspeed
File Size 655.85 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet E4D20120D Datasheet

Overview

E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode.

Key Features

  • 4th generation SiC merged PIN schottky technology.
  • Zero reverse recovery current.
  • High-frequency operation.
  • Temperature-independent switching behavior.
  • AEC-Q101 qualified and PPAP capable.
  • Humidity resistant TO-247-3 Package Types: TO-247-3 PN’s: E4D20120D Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, p.