E4D20120A
Features
Package
- 4th Generation Si C Merged PIN Schottky Technology
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- AEC-Q101 Qualified and PPAP Capable
- Humidity Resistant
Benefits
TO-220-2
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Ideal for Outdoor Environments Applications
PIN 1 PIN 2
- Boost diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
- AC/DC converters
- Automotive and Traction Power Conversion
- PV Inverters
Part Number E4D20120A
VDS 900 V ID @ 25˚C 11.5 A RDS(on) 280 mΩ
CASE
Package TO-220-2
Marking E4D20120
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VRRM Repetitive Peak Reverse Voltage VR DC Peak Reverse Voltage
IF Continuous Forward Current
Ptot IFRM d V/dt ∫i2dt
Power...
