E4D20120G
Features
Package
- 4th Generation Si C Merged PIN Schottky Technology
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- AEC-Q101 Qualified and PPAP Capable
- Humidity Resistant
Benefits
TO-263-2
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
- Ideal for Outdoor Environments
PIN 1 PIN 2
Applications
- Boost diodes in PFC or DC/DC stages
- Free Wheeling Diodes in Inverter stages
- AC/DC converters
- Automotive and Traction Power Conversion
- PV Inverters
Part Number E4D20120G
VDS ID @ 25˚C RDS(on)
900 V 11.5 A 280 mΩ
CASE
Package TO-263-2
Marking E4D20120
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
DC Peak Reverse Voltage
Continuous Forward Current
Ptot
Power Dissipation
IFRM d...
