Datasheet Details
| Part number | E4D10120A |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.58 MB |
| Description | 10A Silicon Carbide Schottky Diode |
| Datasheet |
 E4D10120A Datasheet
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| Part number | E4D10120A |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 1.58 MB |
| Description | 10A Silicon Carbide Schottky Diode |
| Datasheet |
E4D10120A Datasheet
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With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.
In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
E4D10120A E-Series Automotive 4th Generation 1200 V, 10 A Silicon Carbide Schottky.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
E4D10120A | Silicon Carbide Schottky Diode | CREE |
| Part Number | Description |
|---|---|
| E4D02120E | Silicon Carbide Schottky Diode |
| E4D20120A | 20A Silicon Carbide Schottky Diode |
| E4D20120D | Silicon Carbide Power MOSFET |
| E4D20120G | 20A Silicon Carbide Schottky Diode |