Datasheet Details
| Part number | E4D02120E |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 709.40 KB |
| Description | Silicon Carbide Schottky Diode |
| Download | E4D02120E Download (PDF) |
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| Part number | E4D02120E |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 709.40 KB |
| Description | Silicon Carbide Schottky Diode |
| Download | E4D02120E Download (PDF) |
|
|
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With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway.
In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
E4D02120E 4th Generation 1200 V, 2 A Silicon Carbide Schottky.
| Part Number | Description |
|---|---|
| E4D10120A | 10A Silicon Carbide Schottky Diode |
| E4D20120A | 20A Silicon Carbide Schottky Diode |
| E4D20120D | Silicon Carbide Power MOSFET |
| E4D20120G | 20A Silicon Carbide Schottky Diode |