E4D02120E
Description
With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications.
PIN 1 PIN 2
CASE
Package Type: TO-252-2 Marking: E4D02120
Features
- Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
- Zero Reverse Recovery Current / Forward
Recovery Voltage
- Temperature-Independent Switching Behavior
- AEC-Q101 + HV-H3TRB Qualified, PPAP Capable
Applications
- Bootstrap Diode
- Boost Diodes in PFC
- Automotive Power Converstion
- PV Inverters
- Outdoor Power Conversion
Maximum Ratings (TC...
