VBT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

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Datasheet Specifications

Part number: VBT3060G-E3
Manufacturer: Vishay ↗
File Size: 143.16 KB
Datasheet: VBT3060G-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Not recommended for PCB bottom side wave mounting
* Solder

VBT3060G-E3 Distributors

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VBT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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