VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VBT3045CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.

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Datasheet Specifications

Part number: VBT3045CBP-E3
Manufacturer: Vishay ↗
File Size: 87.95 KB
Datasheet: VBT3045CBP-E3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max. (DC forward current) Package 2 x 15 A 45 V 200 A 0.39 V 150 °C 200 °C TO-263AB

VBT3045CBP-E3 Distributors

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VBT3045CBP-E3 Trench MOS Barrier Schottky Rectifier Vishay

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