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VBT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier

VBT3045CBP Description

www.DataSheet.co.kr New Product VBT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection U.

VBT3045CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

VBT3045CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.39 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability ratin

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Datasheet Details

Part number
VBT3045CBP
Manufacturer
Vishay ↗
File Size
139.50 KB
Datasheet
VBT3045CBP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier Rectifier

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Trench MOS Barrier Schottky Rectifier Rectifier Vishay
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