Datasheet4U Logo Datasheet4U.com

VBT4045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet  Datasheet Preview Page 1

Description

New Product VBT4045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A TMBS ® .

📥 Download Datasheet

Preview of VBT4045C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
VBT4045C
Manufacturer
Vishay ↗ Siliconix
File Size
99.20 KB
Datasheet
VBT4045C_VishaySiliconix.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 45 V 240 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-

VBT4045C Distributors

📁 Related Datasheet

📌 All Tags

Vishay Siliconix VBT4045C-like datasheet