VBT4060C Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 .

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Datasheet Specifications

Part number: VBT4060C
Manufacturer: Vishay ↗
File Size: 137.83 KB
Datasheet: VBT4060C_Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 60 V 240 A 0.48 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound me

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VBT4060C Dual Trench MOS Barrier Schottky Rectifier Vishay

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