VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® .

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Datasheet Specifications

Part number: VBT2045C
Manufacturer: Vishay ↗ Siliconix
File Size: 99.17 KB
Datasheet: VBT2045C_VishaySiliconix.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-

VBT2045C Distributors

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VBT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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