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VBT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier

VBT2060G Description

www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

VBT2060G Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VBT2060G Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT2060G PIN 1 K PIN 2 HEATSINK VIT2060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Pac

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Datasheet Details

Part number
VBT2060G
Manufacturer
Vishay ↗
File Size
151.64 KB
Datasheet
VBT2060G-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT2060G-like datasheet