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VBT2045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT2045C-E3 Description

www.vishay.com VBT2045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A .

VBT2045C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

VBT2045C-E3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A TJ max. Package 0.41 V 150 °C D2PAK (TO-263AB) Circuit con

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Datasheet Details

Part number
VBT2045C-E3
Manufacturer
Vishay ↗
File Size
97.16 KB
Datasheet
VBT2045C-E3-Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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