Datasheet4U Logo Datasheet4U.com

VBT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT3045C Description

www.vishay.com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A TMB.

VBT3045C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?999

VBT3045C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 45 V 200 A 0.39 V 150 °C D2PAK (TO-263AB) Circuit configura

📥 Download Datasheet

Preview of VBT3045C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBT3045C
Manufacturer
Vishay ↗ Siliconix
File Size
97.80 KB
Datasheet
VBT3045C_VishaySiliconix.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VBT3045CBP - Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
  • VBT3045CBP-E3 - Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3045CBP-M3 - Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3045BP - Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3045BP-M3 - Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3060C - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VBT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

📌 All Tags

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
Vishay Siliconix VBT3045C-like datasheet